3D TCAD Simulation for CMOS Nanoeletronic Devices
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portes grátis
3D TCAD Simulation for CMOS Nanoeletronic Devices
Wu, Yung-Chun; Jhan, Yi-Ruei
Springer Verlag, Singapore
07/2017
330
Dura
Inglês
9789811030659
15 a 20 dias
6387
Descrição não disponível.
Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools.- Simulation analysis of 2D MOSFET.- Simulation analysis of 3D FinFET with LG = 15 nm.- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm.- Simulation analysis of GAA NWFET.- Simulation analysis of Junctionless FET with LG = 10 nm.- Simulation analysis of Tunnel FET.- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.
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Semiconductor Design Textbook;TCAD for Semiconductor Devices;3D Simulation of Semiconductor Processes;Nanoeletronic Devices;Simulation Analysis;Nano-Semiconductor
Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools.- Simulation analysis of 2D MOSFET.- Simulation analysis of 3D FinFET with LG = 15 nm.- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm.- Simulation analysis of GAA NWFET.- Simulation analysis of Junctionless FET with LG = 10 nm.- Simulation analysis of Tunnel FET.- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
