Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
Cheng, Jie
Springer Verlag, Singapore
09/2017
137
Dura
Inglês
9789811061646
15 a 20 dias
3613
Descrição não disponível.
Introduction.- Material Removal Mechanism of Cu in KIO4-based Slurry.- Material Removal Mechanism of Ru in KIO4-based Slurry.- Tribocorrosion Investigations of Cu/Ru Interconnect Structure during CMP.- Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution.- Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru.- Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO4-based Slurry.- Conclusions and Recommendations.
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Chemical mechanical polishing;Novel barrier layer material;Tribocorrosion properties;Cu/Ru galvanic corrosion;Chemical-mechanical synergistic effect
Introduction.- Material Removal Mechanism of Cu in KIO4-based Slurry.- Material Removal Mechanism of Ru in KIO4-based Slurry.- Tribocorrosion Investigations of Cu/Ru Interconnect Structure during CMP.- Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution.- Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru.- Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO4-based Slurry.- Conclusions and Recommendations.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
